2N7002LT1G LRC Leshan Radio Co Ltd | Chip 1 Exchange

2N7002LT1G

Manufacturer: LRC Leshan Radio Co Ltd

Product Category: Transistors

Description:

Product Technical Specifications

Manufacturer Part Number:

L2N7002LT1G

Rohs Code:

Yes

Part Life Cycle Code:

Contact Manufacturer

Ihs Manufacturer:

LESHAN RADIO CO LTD

Package Description:

SMALL OUTLINE, R-PDSO-G3

Reach Compliance Code:

unknown

ECCN Code:

EAR99

Manufacturer:

LRC Leshan Radio Co Ltd

Risk Rank:

4.88

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

60 V

Drain Current-Max (Abs) (ID):

0.075 A

Drain Current-Max (ID):

0.115 A

Drain-source On Resistance-Max:

7.5 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss):

5 pF

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

Number of Elements:

1

Number of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

150 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

NOT SPECIFIED

Polarity/Channel Type:

N-CHANNEL

Power Dissipation-Max (Abs):

0.3 W

Subcategory:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Time@Peak Reflow Temperature-Max (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

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