2N7336

Manufacturer: Infineon Technologies AG

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

2N7336

Manufacturer Part Number:

2N7336

Rohs Code:

No

Part Life Cycle Code:

Active

Ihs Manufacturer:

INFINEON TECHNOLOGIES AG

Reach Compliance Code:

not_compliant

ECCN Code:

EAR99

Manufacturer:

Infineon Technologies AG

Risk Rank:

6.93

Avalanche Energy Rating (Eas):

75 mJ

Configuration:

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

100 V

Drain Current-Max (Abs) (ID):

0.75 A

Drain Current-Max (ID):

1 A

Drain-source On Resistance-Max:

0.7 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

MO-036AB

JESD-30 Code:

R-CDIP-T14

JESD-609 Code:

e0

Number of Elements:

4

Number of Terminals:

14

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

150 °C

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style:

IN-LINE

Polarity/Channel Type:

N-CHANNEL AND P-CHANNEL

Power Dissipation-Max (Abs):

1.4 W

Pulsed Drain Current-Max (IDM):

4 A

Qualification Status:

Not Qualified

Subcategory:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

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