BDP949E6327

Manufacturer: Infineon Technologies AG

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

BDP949E6327HTSA1

Manufacturer Part Number:

BDP949E6327HTSA1

Rohs Code:

Yes

Part Life Cycle Code:

Obsolete

Ihs Manufacturer:

INFINEON TECHNOLOGIES AG

Package Description:

,

Reach Compliance Code:

compliant

ECCN Code:

EAR99

Manufacturer:

Infineon Technologies AG

Risk Rank:

7.72

Case Connection:

COLLECTOR

Collector Current-Max (IC):

3 A

Collector-Base Capacitance-Max:

25 pF

Collector-Emitter Voltage-Max:

60 V

Configuration:

SINGLE

DC Current Gain-Min (hFE):

50

JESD-30 Code:

R-PDSO-G4

Moisture Sensitivity Level:

1

Number of Elements:

1

Number of Terminals:

4

Operating Temperature-Max:

150 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Polarity/Channel Type:

NPN

Power Dissipation-Max (Abs):

5 W

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Transition Frequency-Nom (fT):

100 MHz

VCEsat-Max:

0.5 V