BFG19SE6327

Manufacturer: Infineon Technologies AG

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

BFG19SE6327

Manufacturer Part Number:

BFG19SE6327

Rohs Code:

Yes

Part Life Cycle Code:

Obsolete

Ihs Manufacturer:

INFINEON TECHNOLOGIES AG

Package Description:

SMALL OUTLINE, R-PDSO-G4

Reach Compliance Code:

compliant

ECCN Code:

EAR99

Manufacturer:

Infineon Technologies AG

Risk Rank:

8.77

Case Connection:

COLLECTOR

Collector Current-Max (IC):

0.1 A

Collector-Base Capacitance-Max:

1.4 pF

Collector-Emitter Voltage-Max:

15 V

Configuration:

SINGLE

DC Current Gain-Min (hFE):

70

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

Number of Elements:

1

Number of Terminals:

4

Operating Temperature-Max:

150 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

NOT SPECIFIED

Polarity/Channel Type:

NPN

Power Dissipation-Max (Abs):

1 W

Qualification Status:

Not Qualified

Subcategory:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Time@Peak Reflow Temperature-Max (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Transition Frequency-Nom (fT):

5500 MHz

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