BSB014N04LX3GXUMA1

Manufacturer: Infineon Technologies AG

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

BSB014N04LX3GXUMA1

Manufacturer Part Number:

BSB014N04LX3GXUMA1

Pbfree Code:

Yes

Rohs Code:

Yes

Part Life Cycle Code:

Obsolete

Ihs Manufacturer:

INFINEON TECHNOLOGIES AG

Package Description:

CHIP CARRIER, R-MBCC-N3

Pin Count:

3

Reach Compliance Code:

compliant

ECCN Code:

EAR99

Manufacturer:

Infineon Technologies AG

Risk Rank:

7.7

Avalanche Energy Rating (Eas):

260 mJ

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

40 V

Drain Current-Max (ID):

180 A

Drain-source On Resistance-Max:

0.0014 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-MBCC-N3

JESD-609 Code:

e4

Moisture Sensitivity Level:

3

Number of Elements:

1

Number of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

150 °C

Operating Temperature-Min:

-40 °C

Package Body Material:

METAL

Package Shape:

RECTANGULAR

Package Style:

CHIP CARRIER

Polarity/Channel Type:

N-CHANNEL

Power Dissipation-Max (Abs):

89 W

Pulsed Drain Current-Max (IDM):

400 A

Qualification Status:

Not Qualified

Surface Mount:

YES

Terminal Finish:

SILVER NICKEL

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

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Alternate Parts

BSB014N04LX3G