BSC030P03NS3G

Manufacturer: Infineon Technologies AG

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

BSC030P03NS3G

Manufacturer Part Number:

BSC030P03NS3G

Pbfree Code:

Yes

Rohs Code:

Yes

Part Life Cycle Code:

Active

Ihs Manufacturer:

INFINEON TECHNOLOGIES AG

Package Description:

SMALL OUTLINE, R-PDSO-F5

Pin Count:

Reach Compliance Code:

not_compliant

ECCN Code:

EAR99

Manufacturer:

Infineon Technologies AG

Risk Rank:

5.81

Samacsys Description:

Infineon BSC030P03NS3G P-channel MOSFET Transistor, -100 A, -30 V, 8-Pin TDSON

Samacsys Manufacturer:

Infineon

Avalanche Energy Rating (Eas):

345 mJ

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

30 V

Drain Current-Max (Abs) (ID):

100 A

Drain Current-Max (ID):

25.4 A

Drain-source On Resistance-Max:

0.0046 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

Moisture Sensitivity Level:

Number of Elements:

Number of Terminals:

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

150 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

260

Polarity/Channel Type:

P-CHANNEL

Power Dissipation-Max (Abs):

125 W

Pulsed Drain Current-Max (IDM):

200 A

Qualification Status:

Not Qualified

Subcategory:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

FLAT

Terminal Position:

DUAL

Time@Peak Reflow Temperature-Max (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Cart

BSC030P03NS3G

Product Technical Specifications

Source Content uid:

Manufacturer Part Number:

Pbfree Code:

Rohs Code:

Part Life Cycle Code:

Ihs Manufacturer:

Package Description:

Pin Count:

Reach Compliance Code:

ECCN Code:

Manufacturer:

Risk Rank:

Samacsys Description:

Samacsys Manufacturer:

Avalanche Energy Rating (Eas):

Case Connection:

Configuration:

DS Breakdown Voltage-Min:

Drain Current-Max (Abs) (ID):

Drain Current-Max (ID):

Drain-source On Resistance-Max:

FET Technology:

JESD-30 Code:

JESD-609 Code:

Moisture Sensitivity Level:

Number of Elements:

Number of Terminals:

Operating Mode:

Operating Temperature-Max:

Package Body Material:

Package Shape:

Package Style:

Peak Reflow Temperature (Cel):

Polarity/Channel Type:

Power Dissipation-Max (Abs):

Pulsed Drain Current-Max (IDM):

Qualification Status:

Subcategory:

Surface Mount:

Terminal Finish:

Terminal Form:

Terminal Position:

Time@Peak Reflow Temperature-Max (s):

Transistor Application:

Transistor Element Material:

Alternate Parts

BSC030P03NS3GAUMA1

Datasheets

Datasheets Files List

Datasheets PDF View

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