BSC032N03S

Manufacturer: Infineon Technologies AG

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

BSC032N03S

Manufacturer Part Number:

BSC032N03S

Rohs Code:

Part Life Cycle Code:

Obsolete

Package Description:

SMALL OUTLINE, R-PDSO-N8

Pin Count:

Reach Compliance Code:

not_compliant

ECCN Code:

EAR99

Manufacturer:

Infineon Technologies AG

Risk Rank:

5.86

Additional Feature:

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Avalanche Energy Rating (Eas):

550 mJ

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

30 V

Drain Current-Max (Abs) (ID):

23 A

Drain Current-Max (ID):

23 A

Drain-source On Resistance-Max:

0.0049 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

Moisture Sensitivity Level:

Number of Elements:

Number of Terminals:

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

150 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

235

Polarity/Channel Type:

N-CHANNEL

Power Dissipation-Max (Abs):

78 W

Pulsed Drain Current-Max (IDM):

200 A

Qualification Status:

Not Qualified

Subcategory:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Time@Peak Reflow Temperature-Max (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Cart

BSC032N03S

Product Technical Specifications

Source Content uid:

Manufacturer Part Number:

Rohs Code:

Part Life Cycle Code:

Package Description:

Pin Count:

Reach Compliance Code:

ECCN Code:

Manufacturer:

Risk Rank:

Additional Feature:

Avalanche Energy Rating (Eas):

Configuration:

DS Breakdown Voltage-Min:

Drain Current-Max (Abs) (ID):

Drain Current-Max (ID):

Drain-source On Resistance-Max:

FET Technology:

JESD-30 Code:

JESD-609 Code:

Moisture Sensitivity Level:

Number of Elements:

Number of Terminals:

Operating Mode:

Operating Temperature-Max:

Package Body Material:

Package Shape:

Package Style:

Peak Reflow Temperature (Cel):

Polarity/Channel Type:

Power Dissipation-Max (Abs):

Pulsed Drain Current-Max (IDM):

Qualification Status:

Subcategory:

Surface Mount:

Terminal Finish:

Terminal Form:

Terminal Position:

Time@Peak Reflow Temperature-Max (s):

Transistor Application:

Transistor Element Material:

Datasheets

Datasheets Files List

Datasheets PDF View

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