BSC036NE7NS3GATMA1

Manufacturer: Infineon Technologies AG

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

BSC036NE7NS3GATMA1

Manufacturer Part Number:

BSC036NE7NS3GATMA1

Pbfree Code:

No

Rohs Code:

Yes

Part Life Cycle Code:

Active

Package Description:

SMALL OUTLINE, R-PDSO-F5

Pin Count:

8

Reach Compliance Code:

not_compliant

ECCN Code:

EAR99

Manufacturer:

Infineon Technologies AG

Risk Rank:

1.76

Avalanche Energy Rating (Eas):

260 mJ

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

75 V

Drain Current-Max (ID):

20 A

Drain-source On Resistance-Max:

0.0036 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e3

Moisture Sensitivity Level:

1

Number of Elements:

1

Number of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Polarity/Channel Type:

N-CHANNEL

Pulsed Drain Current-Max (IDM):

400 A

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON