BSC252N10NSFG

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Product Technical Specifications

Source Content uid

BSC252N10NSFG

Pbfree Code

Yes

Rohs Code

Yes

Part Life Cycle Code

Active

Package Description

SMALL OUTLINE, R-PDSO-F5

Pin Count

8

Reach Compliance Code

not_compliant

ECCN Code

EAR99

Avalanche Energy Rating (Eas)

68 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

100 V

Drain Current-Max (Abs) (ID)

40 A

Drain Current-Max (ID)

7.2 A

Drain-source On Resistance-Max

0.0252 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code

R-PDSO-F8

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

8

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

78 W

Pulsed Drain Current-Max (IDM)

160 A

Qualification Status

Not Qualified

Surface Mount

YES

Terminal Finish

TIN

Terminal Form

FLAT

Terminal Position

DUAL

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Alternate Parts

LM358DT