BSM75GD120DN2

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Product Technical Specifications

Source Content uid

BSM75GD120DN2

Rohs Code

Yes

Part Life Cycle Code

Obsolete

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Reach Compliance Code

not_compliant

ECCN Code

EAR99

Case Connection

ISOLATED

Collector Current-Max (IC)

103 A

Collector-Emitter Voltage-Max

1200 V

Configuration

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

Gate-Emitter Voltage-Max

20 V

JESD-30 Code

R-XUFM-X39

Number of Elements

6

Number of Terminals

39

Operating Temperature-Max

150 °C

Package Body Material

UNSPECIFIED

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

520 W

Qualification Status

Not Qualified

Surface Mount

NO

Terminal Form

UNSPECIFIED

Terminal Position

UPPER

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Transistor Element Material

SILICON

Turn-off Time-Nom (toff)

520 ns

Turn-on Time-Nom (ton)

100 ns

VCEsat-Max

3.2 V