BUK7Y153100E115

Manufacturer: NXP Semiconductors

Product Category: Transistors

Description:

Product Technical Specifications

Manufacturer Part Number:

BUK7Y153-100E,115

Part Life Cycle Code:

Active

Ihs Manufacturer:

NXP SEMICONDUCTORS

Package Description:

PLASTIC, POWER-SO8, LFPAK56-4

Reach Compliance Code:

unknown

ECCN Code:

EAR99

Manufacturer:

NXP Semiconductors

Risk Rank:

7.61

Additional Feature:

AVALANCHE RATED

Avalanche Energy Rating (Eas):

9.5 mJ

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

100 V

Drain Current-Max (ID):

9.4 A

Drain-source On Resistance-Max:

0.153 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

MO-235

JESD-30 Code:

R-PSSO-G4

Number of Elements:

Number of Terminals:

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Polarity/Channel Type:

N-CHANNEL

Pulsed Drain Current-Max (IDM):

37.5 A

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Cart