BUK9J0R940H

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Product Technical Specifications

Source Content uid

BUK9J0R9-40H

Rohs Code

Yes

Part Life Cycle Code

Active

Ihs Manufacturer

NEXPERIA

Package Description

SMALL OUTLINE, R-PSSO-G4

Reach Compliance Code

not_compliant

ECCN Code

EAR99

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

40 V

Drain Current-Max (ID)

220 A

Drain-source On Resistance-Max

0.0026 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss)

760 pF

JESD-30 Code

R-PSSO-G4

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

4

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

175 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

500 W

Pulsed Drain Current-Max (IDM)

600 A

Reference Standard

AEC-Q101; IEC-60134

Surface Mount

YES

Terminal Finish

TIN

Terminal Form

GULL WING

Terminal Position

SINGLE

Time@Peak Reflow Temperature-Max (s)

30

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Alternate Parts

BUK9Y1R640HX