BUK9M2380EX

No Match Found

Product Technical Specifications

Source Content uid

BUK9M23-80EX

Part Life Cycle Code

Active

Ihs Manufacturer

NEXPERIA

Package Description

SMALL OUTLINE, R-PSSO-G4

Pin Count

8

Manufacturer Package Code

SOT1210

Reach Compliance Code

compliant

Avalanche Energy Rating (Eas)

55.4 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

80 V

Drain Current-Max (ID)

37 A

Drain-source On Resistance-Max

0.023 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code

R-PSSO-G4

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

4

Operating Mode

ENHANCEMENT MODE

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

N-CHANNEL

Pulsed Drain Current-Max (IDM)

148 A

Reference Standard

AEC-Q101; IEC-60134

Surface Mount

YES

Terminal Finish

TIN

Terminal Form

GULL WING

Terminal Position

SINGLE

Time@Peak Reflow Temperature-Max (s)

30

Transistor Application

SWITCHING

Transistor Element Material

SILICON