CSD19533Q5A

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Product Technical Specifications

Source Content uid

CSD19533Q5A

Pbfree Code

Yes

Rohs Code

No

Part Life Cycle Code

Active

Package Description

SMALL OUTLINE, R-PDSO-F5

Reach Compliance Code

not_compliant

ECCN Code

EAR99

HTS Code

8541.29.00.95

Additional Feature

AVALANCHE RATED

Avalanche Energy Rating (Eas)

106 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

100 V

Drain Current-Max (Abs) (ID)

100 A

Drain Current-Max (ID)

13 A

Drain-source On Resistance-Max

0.0111 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss)

12.5 pF

JESD-30 Code

R-PDSO-N8

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

8

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

96 W

Pulsed Drain Current-Max (IDM)

231 A

Surface Mount

YES

Terminal Finish

MATTE TIN

Terminal Form

NO LEAD

Terminal Position

DUAL

Time@Peak Reflow Temperature-Max (s)

30

Transistor Application

SWITCHING

Transistor Element Material

SILICON

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