DS1230Y70

Manufacturer: Dallas Semiconductor

Product Category: Memory

Description:

Product Technical Specifications

Manufacturer Part Number:

DS1230Y-70-IND

Rohs Code:

Part Life Cycle Code:

Transferred

Ihs Manufacturer:

DALLAS SEMICONDUCTOR

Package Description:

DIP-28

Reach Compliance Code:

unknown

Manufacturer:

Dallas Semiconductor

Risk Rank:

8.57

Access Time-Max:

70 ns

Additional Feature:

10 YEARS DATA RETENTION PERIOD

JESD-30 Code:

R-PDIP-T28

JESD-609 Code:

Memory Density:

262144 bit

Memory IC Type:

NON-VOLATILE SRAM MODULE

Memory Width:

Number of Functions:

Number of Terminals:

Number of Words:

32768 words

Number of Words Code:

32000

Operating Mode:

ASYNCHRONOUS

Operating Temperature-Max:

85 °C

Operating Temperature-Min:

-40 °C

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

RECTANGULAR

Package Style:

IN-LINE

Parallel/Serial:

PARALLEL

Power Supplies:

5 V

Qualification Status:

Not Qualified

Standby Current-Max:

0.005 A

Subcategory:

SRAMs

Supply Current-Max:

0.085 mA

Supply Voltage-Max (Vsup):

5.5 V

Supply Voltage-Min (Vsup):

4.5 V

Supply Voltage-Nom (Vsup):

5 V

Surface Mount:

Technology:

CMOS

Temperature Grade:

INDUSTRIAL

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

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