FDB52N20TM

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Product Technical Specifications

Source Content uid

FDB52N20TM

Pbfree Code

Yes

Part Life Cycle Code

Active

Ihs Manufacturer

ON SEMICONDUCTOR

Package Description

SMALL OUTLINE, R-PSSO-G2

Manufacturer Package Code

418AJ

Reach Compliance Code

not_compliant

ECCN Code

EAR99

Factory Lead Time

10 Weeks

Samacsys Manufacturer

onsemi

Avalanche Energy Rating (Eas)

2520 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

200 V

Drain Current-Max (Abs) (ID)

52 A

Drain Current-Max (ID)

52 A

Drain-source On Resistance-Max

0.049 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code

TO-263

JESD-30 Code

R-PSSO-G2

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

2

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

245

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

357 W

Pulsed Drain Current-Max (IDM)

208 A

Qualification Status

Not Qualified

Surface Mount

YES

Terminal Finish

MATTE TIN

Terminal Form

GULL WING

Terminal Position

SINGLE

Time@Peak Reflow Temperature-Max (s)

30

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Alternate Parts

FDB2614

SUM52N2039P