FDB66N15

No Match Found

Product Technical Specifications

Source Content uid

FDB66N15

Part Life Cycle Code

Obsolete

Ihs Manufacturer

FAIRCHILD SEMICONDUCTOR CORP

Part Package Code

TO-263

Package Description

SMALL OUTLINE, R-PSSO-G2

Pin Count

3

Reach Compliance Code

unknown

ECCN Code

EAR99

Additional Feature

FAST SWITCHING

Avalanche Energy Rating (Eas)

1240 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

150 V

Drain Current-Max (ID)

66 A

Drain-source On Resistance-Max

0.036 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code

TO-263

JESD-30 Code

R-PSSO-G2

Number of Elements

1

Number of Terminals

2

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Polarity/Channel Type

N-CHANNEL

Pulsed Drain Current-Max (IDM)

264 A

Qualification Status

Not Qualified

Surface Mount

YES

Terminal Form

GULL WING

Terminal Position

SINGLE

Transistor Application

SWITCHING

Transistor Element Material

SILICON