FDB8030L

No Match Found

Product Technical Specifications

Source Content uid

FDB8030L

Pbfree Code

Yes

Part Life Cycle Code

End Of Life

Ihs Manufacturer

ON SEMICONDUCTOR

Package Description

SMALL OUTLINE, R-PSSO-G2

Manufacturer Package Code

418AJ

Reach Compliance Code

not_compliant

ECCN Code

EAR99

Factory Lead Time

4 Weeks

Additional Feature

LOGIC LEVEL COMPATIBLE

Avalanche Energy Rating (Eas)

1500 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

30 V

Drain Current-Max (Abs) (ID)

80 A

Drain Current-Max (ID)

80 A

Drain-source On Resistance-Max

0.0035 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code

TO-263AB

JESD-30 Code

R-PSSO-G2

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

2

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

175 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

245

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

187 W

Pulsed Drain Current-Max (IDM)

300 A

Qualification Status

Not Qualified

Surface Mount

YES

Terminal Finish

MATTE TIN

Terminal Form

GULL WING

Terminal Position

SINGLE

Time@Peak Reflow Temperature-Max (s)

30

Transistor Application

SWITCHING

Transistor Element Material

SILICON