FDBL86361F085

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Product Technical Specifications

Source Content uid

FDBL86361-F085

Pbfree Code

Yes

Part Life Cycle Code

Active

Ihs Manufacturer

ON SEMICONDUCTOR

Package Description

SMALL OUTLINE, R-PSSO-F2

Manufacturer Package Code

100CU

Reach Compliance Code

not_compliant

ECCN Code

EAR99

Avalanche Energy Rating (Eas)

820 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

80 V

Drain Current-Max (Abs) (ID)

300 A

Drain Current-Max (ID)

300 A

Drain-source On Resistance-Max

0.0014 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss)

139 pF

JEDEC-95 Code

MO-299A

JESD-30 Code

R-PSSO-F2

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

2

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

175 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

429 W

Reference Standard

AEC-Q101

Surface Mount

YES

Terminal Finish

Matte Tin (Sn) - annealed

Terminal Form

FLAT

Terminal Position

SINGLE

Time@Peak Reflow Temperature-Max (s)

30

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Turn-off Time-Max (toff)

193 ns

Turn-on Time-Max (ton)

128 ns