FDMS86263P

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Product Technical Specifications

Source Content uid

FDMS86263P

Pbfree Code

Yes

Part Life Cycle Code

Active

Ihs Manufacturer

ON SEMICONDUCTOR

Package Description

SMALL OUTLINE, R-PDSO-F5

Manufacturer Package Code

483AE

Reach Compliance Code

not_compliant

ECCN Code

EAR99

Factory Lead Time

99 Weeks, 6 Days

Avalanche Energy Rating (Eas)

384 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

150 V

Drain Current-Max (Abs) (ID)

22 A

Drain Current-Max (ID)

4.4 A

Drain-source On Resistance-Max

0.053 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code

MO-240AA

JESD-30 Code

R-PDSO-F5

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

5

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Polarity/Channel Type

P-CHANNEL

Power Dissipation-Max (Abs)

104 W

Pulsed Drain Current-Max (IDM)

70 A

Surface Mount

YES

Terminal Finish

Matte Tin (Sn) - annealed

Terminal Form

FLAT

Terminal Position

DUAL

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Alternate Parts

SI7439DPT1GE3

SIR873DPT1GE3