FDN5618P ON Semiconductor | Chip 1 Exchange

FDN5618P

Manufacturer: ON Semiconductor

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

FDN5618P

Manufacturer Part Number:

FDN5618P

Brand Name:

ON Semiconductor

Pbfree Code:

Yes

Part Life Cycle Code:

Active

Ihs Manufacturer:

ON SEMICONDUCTOR

Package Description:

SMALL OUTLINE, R-PDSO-G3

Manufacturer Package Code:

527AG

Reach Compliance Code:

compliant

ECCN Code:

EAR99

Factory Lead Time:

8 Weeks

Manufacturer:

ON Semiconductor

Risk Rank:

1.07

Samacsys Description:

Trans MOSFET P-CH 60V 1.25A 3-SuperSOT

Samacsys Manufacturer:

ON Semiconductor

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

60 V

Drain Current-Max (Abs) (ID):

1.25 A

Drain Current-Max (ID):

1.25 A

Drain-source On Resistance-Max:

0.17 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level:

1

Number of Elements:

1

Number of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

150 °C

Operating Temperature-Min:

-55 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

260

Polarity/Channel Type:

P-CHANNEL

Power Dissipation-Max (Abs):

0.5 W

Pulsed Drain Current-Max (IDM):

10 A

Qualification Status:

Not Qualified

Subcategory:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Time@Peak Reflow Temperature-Max (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

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