FDS6675BZ

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Product Technical Specifications

Source Content uid

FDS6675BZ

Pbfree Code

Yes

Part Life Cycle Code

Active

Ihs Manufacturer

ON SEMICONDUCTOR

Package Description

SMALL OUTLINE, R-PDSO-G8

Manufacturer Package Code

751EB

Reach Compliance Code

compliant

ECCN Code

EAR99

Factory Lead Time

55 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

30 V

Drain Current-Max (Abs) (ID)

11 A

Drain Current-Max (ID)

11 A

Drain-source On Resistance-Max

0.013 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss)

500 pF

JESD-30 Code

R-PDSO-G8

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

8

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

P-CHANNEL

Power Dissipation-Max (Abs)

2.5 W

Pulsed Drain Current-Max (IDM)

55 A

Qualification Status

Not Qualified

Surface Mount

YES

Terminal Finish

MATTE TIN

Terminal Form

GULL WING

Terminal Position

DUAL

Time@Peak Reflow Temperature-Max (s)

30

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Turn-off Time-Max (toff)

300 ns

Turn-on Time-Max (ton)

26 ns

Alternate Parts

AO4407A