FQB10N20CTM

Manufacturer: Rochester Electronics LLC

Product Category: Transistors

Description:

Product Technical Specifications

Manufacturer Part Number:

FQB10N20CTM

Pbfree Code:

Yes

Part Life Cycle Code:

Active

Ihs Manufacturer:

ROCHESTER ELECTRONICS LLC

Package Description:

LEAD FREE, D2PAK-3

Pin Count:

3

Reach Compliance Code:

unknown

Manufacturer:

Rochester Electronics LLC

Risk Rank:

7.13

Avalanche Energy Rating (Eas):

210 mJ

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

200 V

Drain Current-Max (ID):

9.5 A

Drain-source On Resistance-Max:

0.36 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level:

NOT APPLICABLE

Number of Elements:

1

Number of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

NOT APPLICABLE

Polarity/Channel Type:

N-CHANNEL

Pulsed Drain Current-Max (IDM):

38 A

Qualification Status:

COMMERCIAL

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Time@Peak Reflow Temperature-Max (s):

NOT APPLICABLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

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Alternate Parts

IRF630NSTRLPBF

IRF630STRLPBF