FQB6N80

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Product Technical Specifications

Source Content uid

FQB6N80

Pbfree Code

No

Rohs Code

No

Part Life Cycle Code

Obsolete

Ihs Manufacturer

FAIRCHILD SEMICONDUCTOR CORP

Part Package Code

D2PAK

Package Description

D2PAK-3

Pin Count

3

Reach Compliance Code

compliant

ECCN Code

EAR99

HTS Code

8541.29.00.95

Avalanche Energy Rating (Eas)

680 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

800 V

Drain Current-Max (Abs) (ID)

5.8 A

Drain Current-Max (ID)

5.8 A

Drain-source On Resistance-Max

1.95 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code

TO-263AB

JESD-30 Code

R-PSSO-G2

JESD-609 Code

e0

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

2

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

158 W

Pulsed Drain Current-Max (IDM)

23.2 A

Qualification Status

Not Qualified

Surface Mount

YES

Terminal Finish

TIN LEAD

Terminal Form

GULL WING

Terminal Position

SINGLE

Transistor Application

SWITCHING

Transistor Element Material

SILICON