FQD18N20V2

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Product Technical Specifications

Source Content uid

FQD18N20V2

Rohs Code

Yes

Part Life Cycle Code

Active

Ihs Manufacturer

ON SEMICONDUCTOR

Package Description

SMALL OUTLINE, R-PSSO-G2

Reach Compliance Code

compliant

ECCN Code

EAR99

Additional Feature

AVALANCHE RATED, FAST SWITCHING

Avalanche Energy Rating (Eas)

340 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

200 V

Drain Current-Max (ID)

15 A

Drain-source On Resistance-Max

0.14 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code

TO-252

JESD-30 Code

R-PSSO-G2

Number of Elements

1

Number of Terminals

2

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Polarity/Channel Type

N-CHANNEL

Pulsed Drain Current-Max (IDM)

60 A

Qualification Status

Not Qualified

Surface Mount

YES

Terminal Form

GULL WING

Terminal Position

SINGLE

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Fast Shipping

Alternate Parts

IRFR15N20DPBF