FQD18N20V2TM

Manufacturer: onsemi

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

FQD18N20V2TM

Manufacturer Part Number:

FQD18N20V2TM

Brand Name:

ON Semiconductor

Pbfree Code:

Yes

Part Life Cycle Code:

Active

Ihs Manufacturer:

ON SEMICONDUCTOR

Package Description:

SMALL OUTLINE, R-PDSO-G2

Manufacturer Package Code:

369AS

Reach Compliance Code:

not_compliant

ECCN Code:

EAR99

Manufacturer:

onsemi

Risk Rank:

1.12

Avalanche Energy Rating (Eas):

340 mJ

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

200 V

Drain Current-Max (Abs) (ID):

15 A

Drain Current-Max (ID):

15 A

Drain-source On Resistance-Max:

0.14 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level:

1

Number of Elements:

1

Number of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

150 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

260

Polarity/Channel Type:

N-CHANNEL

Power Dissipation-Max (Abs):

83 W

Pulsed Drain Current-Max (IDM):

60 A

Qualification Status:

Not Qualified

Subcategory:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Time@Peak Reflow Temperature-Max (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

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