FQD3P50

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Product Technical Specifications

Source Content uid

FQD3P50

Part Life Cycle Code

Active

Ihs Manufacturer

ON SEMICONDUCTOR

Package Description

SMALL OUTLINE, R-PSSO-G2

Reach Compliance Code

compliant

ECCN Code

EAR99

Avalanche Energy Rating (Eas)

250 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

500 V

Drain Current-Max (ID)

2.1 A

Drain-source On Resistance-Max

4.9 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code

TO-252

JESD-30 Code

R-PSSO-G2

Number of Elements

1

Number of Terminals

2

Operating Mode

ENHANCEMENT MODE

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Polarity/Channel Type

P-CHANNEL

Pulsed Drain Current-Max (IDM)

8.4 A

Surface Mount

YES

Terminal Form

GULL WING

Terminal Position

SINGLE

Transistor Application

SWITCHING

Transistor Element Material

SILICON