GD5F1GQ4UCYIGR GigaDevice Semiconductor (Beijing) Inc | Chip 1 Exchange

GD5F1GQ4UCYIGR

Manufacturer: GigaDevice Semiconductor (Beijing) Inc

Product Category: Memory

Description:

Product Technical Specifications

Manufacturer Part Number:

GD5F1GQ4UCYIGR

Rohs Code:

Yes

Part Life Cycle Code:

Contact Manufacturer

Ihs Manufacturer:

GIGADEVICE SEMICONDUCTOR INC

Package Description:

HSON,

Reach Compliance Code:

unknown

ECCN Code:

EAR99

HTS Code:

8542.32.00.51

Manufacturer:

GigaDevice Semiconductor (Beijing) Inc

Risk Rank:

5.81

Additional Feature:

IT IS ALSO ORGANIZED AS 1G X 1

Alternate Memory Width:

2

Clock Frequency-Max (fCLK):

120 MHz

JESD-30 Code:

R-PDSO-N8

Length:

8 mm

Memory Density:

1073741824 bit

Memory IC Type:

FLASH

Memory Width:

4

Number of Functions:

1

Number of Terminals:

8

Number of Words:

268435456 words

Number of Words Code:

256000000

Operating Mode:

SYNCHRONOUS

Operating Temperature-Max:

85 °C

Operating Temperature-Min:

-40 °C

Organization:

256MX4

Package Body Material:

PLASTIC/EPOXY

Package Code:

HSON

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE, HEAT SINK/SLUG

Parallel/Serial:

SERIAL

Peak Reflow Temperature (Cel):

NOT SPECIFIED

Programming Voltage:

3.3 V

Supply Voltage-Max (Vsup):

3.6 V

Supply Voltage-Min (Vsup):

2.7 V

Supply Voltage-Nom (Vsup):

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

INDUSTRIAL

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Time@Peak Reflow Temperature-Max (s):

NOT SPECIFIED

Width:

6 mm

Fast Shipping