H5N2008P Renesas Electronics Corporation | Chip 1 Exchange

H5N2008P

Manufacturer: Renesas Electronics Corporation

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

H5N2008P-E

Manufacturer Part Number:

H5N2008P-E

Brand Name:

Renesas

Pbfree Code:

Yes

Rohs Code:

Yes

Part Life Cycle Code:

Not Recommended

Part Package Code:

TO-3P

Package Description:

FLANGE MOUNT, R-PSFM-T3

Pin Count:

4

Manufacturer Package Code:

PRSS0004ZE-A4

Reach Compliance Code:

compliant

ECCN Code:

EAR99

Manufacturer:

Renesas Electronics Corporation

Risk Rank:

5.44

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

200 V

Drain Current-Max (Abs) (ID):

96 A

Drain Current-Max (ID):

96 A

Drain-source On Resistance-Max:

0.023 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSFM-T3

Moisture Sensitivity Level:

1

Number of Elements:

1

Number of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

150 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

FLANGE MOUNT

Peak Reflow Temperature (Cel):

NOT SPECIFIED

Polarity/Channel Type:

N-CHANNEL

Power Dissipation-Max (Abs):

150 W

Pulsed Drain Current-Max (IDM):

192 A

Qualification Status:

Not Qualified

Subcategory:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Time@Peak Reflow Temperature-Max (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

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