H5N2008P

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Product Technical Specifications

Source Content uid

H5N2008P-E

Pbfree Code

Yes

Rohs Code

Yes

Part Life Cycle Code

Not Recommended

Ihs Manufacturer

RENESAS ELECTRONICS CORP

Part Package Code

TO-3P

Package Description

FLANGE MOUNT, R-PSFM-T3

Pin Count

4

Manufacturer Package Code

PRSS0004ZE

Reach Compliance Code

compliant

ECCN Code

EAR99

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

200 V

Drain Current-Max (Abs) (ID)

96 A

Drain Current-Max (ID)

96 A

Drain-source On Resistance-Max

0.023 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code

R-PSFM-T3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

3

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

150 W

Pulsed Drain Current-Max (IDM)

192 A

Qualification Status

Not Qualified

Surface Mount

NO

Terminal Form

THROUGH-HOLE

Terminal Position

SINGLE

Transistor Application

SWITCHING

Transistor Element Material

SILICON

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