HYB25DC512160BE5

Manufacturer: Qimonda AG

Product Category: Memory

Description:

Product Technical Specifications

Manufacturer Part Number:

HYB25DC512160BE-5

Pbfree Code:

Yes

Rohs Code:

Yes

Part Life Cycle Code:

Obsolete

Part Package Code:

TSOP2

Package Description:

TSSOP, TSSOP66,.46

Pin Count:

Reach Compliance Code:

unknown

ECCN Code:

EAR99

HTS Code:

8542.32.00.28

Manufacturer:

Qimonda AG

Risk Rank:

9.62

Access Mode:

FOUR BANK PAGE BURST

Access Time-Max:

0.5 ns

Additional Feature:

AUTO/SELF REFRESH

Clock Frequency-Max (fCLK):

200 MHz

I/O Type:

COMMON

Interleaved Burst Length:

2,4,8

JESD-30 Code:

R-PDSO-G66

Length:

22.22 mm

Memory Density:

536870912 bit

Memory IC Type:

DDR1 DRAM

Memory Width:

Moisture Sensitivity Level:

Number of Functions:

Number of Ports:

Number of Terminals:

Number of Words:

33554432 words

Number of Words Code:

32000000

Operating Mode:

SYNCHRONOUS

Operating Temperature-Max:

70 °C

Organization:

32MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

TSSOP

Package Equivalence Code:

TSSOP66,.46

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Power Supplies:

2.6 V

Qualification Status:

Not Qualified

Refresh Cycles:

8192

Seated Height-Max:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

2,4,8

Standby Current-Max:

0.0017 A

Subcategory:

DRAMs

Supply Current-Max:

0.285 mA

Supply Voltage-Max (Vsup):

2.7 V

Supply Voltage-Min (Vsup):

2.3 V

Supply Voltage-Nom (Vsup):

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

COMMERCIAL

Terminal Form:

GULL WING

Terminal Pitch:

0.65 mm

Terminal Position:

DUAL

Width:

10.16 mm

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