HZS12B2TD-E Renesas Electronics Corporation | Chip 1 Exchange

HZS12B2TD-E

Manufacturer: Renesas Electronics Corporation

Product Category: Diodes

Description:

Product Technical Specifications

Source Content uid:

HZS12B2TD-E

Manufacturer Part Number:

HZS12B2TD-E

Brand Name:

Renesas

Rohs Code:

Yes

Part Life Cycle Code:

Obsolete

Part Package Code:

DO-34

Package Description:

O-LALF-W2

Pin Count:

2

Reach Compliance Code:

unknown

ECCN Code:

EAR99

HTS Code:

8541.10.00.50

Manufacturer:

Renesas Electronics Corporation

Risk Rank:

5.68

Case Connection:

ISOLATED

Configuration:

SINGLE

Diode Element Material:

SILICON

Diode Type:

ZENER DIODE

JEDEC-95 Code:

DO-34

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e2

Moisture Sensitivity Level:

1

Number of Elements:

1

Number of Terminals:

2

Operating Temperature-Max:

200 °C

Package Body Material:

GLASS

Package Shape:

ROUND

Package Style:

LONG FORM

Peak Reflow Temperature (Cel):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Power Dissipation-Max:

0.4 W

Qualification Status:

Not Qualified

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN COPPER

Terminal Form:

WIRE

Terminal Position:

AXIAL

Time@Peak Reflow Temperature-Max (s):

NOT SPECIFIED

Working Test Current:

5 mA

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