IPB065N15N3G

Manufacturer: Infineon Technologies AG

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

IPB065N15N3G

Manufacturer Part Number:

IPB065N15N3G

Pbfree Code:

Yes

Rohs Code:

Yes

Part Life Cycle Code:

Active

Ihs Manufacturer:

INFINEON TECHNOLOGIES AG

Part Package Code:

TO-263

Package Description:

SMALL OUTLINE, R-PSSO-G6

Pin Count:

3

Reach Compliance Code:

not_compliant

ECCN Code:

EAR99

Manufacturer:

Infineon Technologies AG

Risk Rank:

7.69

Avalanche Energy Rating (Eas):

780 mJ

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

150 V

Drain Current-Max (Abs) (ID):

130 A

Drain Current-Max (ID):

130 A

Drain-source On Resistance-Max:

0.0065 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263

JESD-30 Code:

R-PSSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level:

1

Number of Elements:

1

Number of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

175 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

260

Polarity/Channel Type:

N-CHANNEL

Power Dissipation-Max (Abs):

300 W

Pulsed Drain Current-Max (IDM):

520 A

Qualification Status:

Not Qualified

Subcategory:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

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