IPB065N15N3GATMA1

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Product Technical Specifications

Source Content uid

IPB065N15N3GATMA1

Pbfree Code

No

Rohs Code

Yes

Part Life Cycle Code

Active

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Part Package Code

TO-263

Package Description

SMALL OUTLINE, R-PSSO-G6

Pin Count

3

Reach Compliance Code

not_compliant

ECCN Code

EAR99

Avalanche Energy Rating (Eas)

780 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

150 V

Drain Current-Max (ID)

130 A

Drain-source On Resistance-Max

0.0065 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code

TO-263

JESD-30 Code

R-PSSO-G6

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

6

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

175 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Polarity/Channel Type

N-CHANNEL

Pulsed Drain Current-Max (IDM)

520 A

Qualification Status

Not Qualified

Surface Mount

YES

Terminal Finish

TIN

Terminal Form

GULL WING

Terminal Position

SINGLE

Transistor Application

SWITCHING

Transistor Element Material

SILICON

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