IPD30N10S3L34ATMA1

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Product Technical Specifications

Source Content uid

IPD30N10S3L34ATMA1

Rohs Code

Yes

Part Life Cycle Code

Active

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Package Description

SMALL OUTLINE, R-PSSO-G2

Reach Compliance Code

not_compliant

ECCN Code

EAR99

Factory Lead Time

56 Weeks, 4 Days

Avalanche Energy Rating (Eas)

138 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

100 V

Drain Current-Max (Abs) (ID)

30 A

Drain Current-Max (ID)

30 A

Drain-source On Resistance-Max

0.0418 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code

TO-252

JESD-30 Code

R-PSSO-G2

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

2

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

175 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

57 W

Pulsed Drain Current-Max (IDM)

120 A

Reference Standard

AEC-Q101

Surface Mount

YES

Terminal Finish

TIN

Terminal Form

GULL WING

Terminal Position

SINGLE

Transistor Element Material

SILICON

Alternate Parts

SQD70140ELGE3