IPD90N06S4L03

Manufacturer: Infineon Technologies AG

Product Category: Transistors

Description:

Product Technical Specifications

Manufacturer Part Number:

IPD90N06S4L03ATMA2

Pbfree Code:

Yes

Rohs Code:

Yes

Part Life Cycle Code:

Active

Package Description:

SMALL OUTLINE, R-PSSO-G2

Reach Compliance Code:

not_compliant

ECCN Code:

EAR99

Factory Lead Time:

16 Weeks

Manufacturer:

Infineon Technologies AG

Risk Rank:

1.78

Avalanche Energy Rating (Eas):

331 mJ

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

60 V

Drain Current-Max (ID):

90 A

Drain-source On Resistance-Max:

0.0035 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level:

1

Number of Elements:

1

Number of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Min:

-55 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

NOT SPECIFIED

Polarity/Channel Type:

N-CHANNEL

Pulsed Drain Current-Max (IDM):

360 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Time@Peak Reflow Temperature-Max (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Fast Shipping

Alternate Parts