IPG20N06S4L26

Manufacturer: Infineon Technologies AG

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

IPG20N06S4L-26

Manufacturer Part Number:

IPG20N06S4L-26

Pbfree Code:

Yes

Rohs Code:

Yes

Part Life Cycle Code:

Active

Ihs Manufacturer:

INFINEON TECHNOLOGIES AG

Package Description:

SMALL OUTLINE, R-PDSO-F8

Pin Count:

Reach Compliance Code:

not_compliant

ECCN Code:

EAR99

Manufacturer:

Infineon Technologies AG

Risk Rank:

7.67

Additional Feature:

LOGIC LEVEL COMPATIBLE

Avalanche Energy Rating (Eas):

35 mJ

Configuration:

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

60 V

Drain Current-Max (Abs) (ID):

20 A

Drain Current-Max (ID):

20 A

Drain-source On Resistance-Max:

0.026 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F8

JESD-609 Code:

Moisture Sensitivity Level:

Number of Elements:

Number of Terminals:

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

175 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

260

Polarity/Channel Type:

N-CHANNEL

Power Dissipation-Max (Abs):

33 W

Pulsed Drain Current-Max (IDM):

80 A

Qualification Status:

Not Qualified

Subcategory:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Element Material:

SILICON

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