IPG20N10S4L35ATMA1

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Product Technical Specifications

Source Content uid

IPG20N10S4L35ATMA1

Rohs Code

Yes

Part Life Cycle Code

Active

Package Description

SMALL OUTLINE, R-PDSO-F

Reach Compliance Code

not_compliant

ECCN Code

EAR99

Factory Lead Time

56 Weeks, 4 Days

Avalanche Energy Rating (Eas)

60 mJ

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

100 V

Drain Current-Max (Abs) (ID)

20 A

Drain Current-Max (ID)

20 A

Drain-source On Resistance-Max

0.035 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss)

60 pF

JESD-30 Code

R-PDSO-F8

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

2

Number of Terminals

8

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

175 °C

Operating Temperature-Min

-55 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

43 W

Pulsed Drain Current-Max (IDM)

80 A

Reference Standard

AEC-Q101

Surface Mount

YES

Terminal Finish

TIN

Terminal Form

FLAT

Terminal Position

DUAL

Transistor Element Material

SILICON