IPT015N10N5ATMA1

Manufacturer: Infineon Technologies AG

Product Category: Transistors

Description:

Product Technical Specifications

Manufacturer Part Number:

IPT015N10N5ATMA1

Pbfree Code:

Yes

Rohs Code:

Yes

Part Life Cycle Code:

Active

Ihs Manufacturer:

INFINEON TECHNOLOGIES AG

Package Description:

SMALL OUTLINE, R-PSSO-F8

Reach Compliance Code:

not_compliant

ECCN Code:

EAR99

Manufacturer:

Infineon Technologies AG

Risk Rank:

0.99

Avalanche Energy Rating (Eas):

652 mJ

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

100 V

Drain Current-Max (ID):

32 A

Drain-source On Resistance-Max:

0.0015 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-F8

JESD-609 Code:

Moisture Sensitivity Level:

Number of Elements:

Number of Terminals:

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Polarity/Channel Type:

N-CHANNEL

Pulsed Drain Current-Max (IDM):

1200 A

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Cart

IPT015N10N5ATMA1

Product Technical Specifications

Manufacturer Part Number:

Pbfree Code:

Rohs Code:

Part Life Cycle Code:

Ihs Manufacturer:

Package Description:

Reach Compliance Code:

ECCN Code:

Manufacturer:

Risk Rank:

Avalanche Energy Rating (Eas):

Case Connection:

Configuration:

DS Breakdown Voltage-Min:

Drain Current-Max (ID):

Drain-source On Resistance-Max:

FET Technology:

JESD-30 Code:

JESD-609 Code:

Moisture Sensitivity Level:

Number of Elements:

Number of Terminals:

Operating Mode:

Package Body Material:

Package Shape:

Package Style:

Polarity/Channel Type:

Pulsed Drain Current-Max (IDM):

Surface Mount:

Terminal Finish:

Terminal Form:

Terminal Position:

Transistor Application:

Transistor Element Material:

Datasheets

Datasheets Files List

Datasheets PDF View

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