IRF1010EZS

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Product Technical Specifications

Rohs Code

No

Part Life Cycle Code

Active

Package Description

PLASTIC, D2PAK-3

Reach Compliance Code

compliant

ECCN Code

EAR99

Additional Feature

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Avalanche Energy Rating (Eas)

99 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

60 V

Drain Current-Max (ID)

75 A

Drain-source On Resistance-Max

0.0085 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code

TO-263AB

JESD-30 Code

R-PSSO-G2

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

2

Operating Mode

ENHANCEMENT MODE

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Polarity/Channel Type

N-CHANNEL

Pulsed Drain Current-Max (IDM)

340 A

Surface Mount

YES

Terminal Form

GULL WING

Terminal Position

SINGLE

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Alternate Parts

IRF1010EZS