IRF1310NSTRR

Manufacturer: Infineon Technologies AG

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

IRF1310NSTRRPBF

Manufacturer Part Number:

IRF1310NSTRRPBF

Rohs Code:

Yes

Part Life Cycle Code:

Obsolete

Ihs Manufacturer:

INFINEON TECHNOLOGIES AG

Package Description:

SMALL OUTLINE, R-PSSO-G2

Reach Compliance Code:

not_compliant

ECCN Code:

EAR99

Manufacturer:

Infineon Technologies AG

Risk Rank:

8.63

Additional Feature:

AVALANCHE RATED, HIGH RELIABILITY

Avalanche Energy Rating (Eas):

420 mJ

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

100 V

Drain Current-Max (Abs) (ID):

42 A

Drain Current-Max (ID):

42 A

Drain-source On Resistance-Max:

0.036 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

Moisture Sensitivity Level:

Number of Elements:

Number of Terminals:

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

175 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

260

Polarity/Channel Type:

N-CHANNEL

Power Dissipation-Max (Abs):

160 W

Pulsed Drain Current-Max (IDM):

140 A

Qualification Status:

Not Qualified

Subcategory:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Time@Peak Reflow Temperature-Max (s):

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

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