IRF3808STRRPBF

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Product Technical Specifications

Source Content uid

IRF3808STRRPBF

Rohs Code

Yes

Part Life Cycle Code

Obsolete

Package Description

SMALL OUTLINE, R-PSSO-G2

Reach Compliance Code

not_compliant

ECCN Code

EAR99

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Avalanche Energy Rating (Eas)

430 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

75 V

Drain Current-Max (Abs) (ID)

106 A

Drain Current-Max (ID)

75 A

Drain-source On Resistance-Max

0.007 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code

TO-263AB

JESD-30 Code

R-PSSO-G2

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

2

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

175 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

200 W

Pulsed Drain Current-Max (IDM)

550 A

Qualification Status

Not Qualified

Surface Mount

YES

Terminal Finish

MATTE TIN OVER NICKEL

Terminal Form

GULL WING

Terminal Position

SINGLE

Time@Peak Reflow Temperature-Max (s)

30

Transistor Application

SWITCHING

Transistor Element Material

SILICON