IRF6644PBF

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Product Technical Specifications

Rohs Code

Yes

Part Life Cycle Code

Active

Reach Compliance Code

compliant

ECCN Code

EAR99

Additional Feature

TR, 7 INCH:1000

Avalanche Energy Rating (Eas)

86 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

100 V

Drain Current-Max (ID)

57 A

Drain-source On Resistance-Max

0.013 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss)

60 pF

JESD-30 Code

R-XBCC-N3

JESD-609 Code

e4

Moisture Sensitivity Level

3

Number of Elements

1

Number of Terminals

3

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

Operating Temperature-Min

-40 °C

Package Body Material

UNSPECIFIED

Package Shape

RECTANGULAR

Package Style

CHIP CARRIER

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

89 W

Pulsed Drain Current-Max (IDM)

228 A

Surface Mount

YES

Terminal Finish

SILVER NICKEL

Terminal Form

NO LEAD

Terminal Position

BOTTOM

Time@Peak Reflow Temperature-Max (s)

30

Transistor Application

SWITCHING

Transistor Element Material

SILICON