IRF6716MTRPBF

Manufacturer: Infineon Technologies AG

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

IRF6716MTRPBF

Manufacturer Part Number:

IRF6716MTRPBF

Rohs Code:

Yes

Part Life Cycle Code:

Not Recommended

Ihs Manufacturer:

INFINEON TECHNOLOGIES AG

Package Description:

CHIP CARRIER, R-XBCC-N3

Reach Compliance Code:

compliant

ECCN Code:

EAR99

Manufacturer:

Infineon Technologies AG

Risk Rank:

6.83

Avalanche Energy Rating (Eas):

330 mJ

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

25 V

Drain Current-Max (Abs) (ID):

180 A

Drain Current-Max (ID):

39 A

Drain-source On Resistance-Max:

0.0016 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-XBCC-N3

JESD-609 Code:

e1

Moisture Sensitivity Level:

1

Number of Elements:

1

Number of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

150 °C

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style:

CHIP CARRIER

Peak Reflow Temperature (Cel):

260

Polarity/Channel Type:

N-CHANNEL

Power Dissipation-Max (Abs):

78 W

Pulsed Drain Current-Max (IDM):

320 A

Qualification Status:

Not Qualified

Subcategory:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Time@Peak Reflow Temperature-Max (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

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