IRF6727MTRPBF

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Product Technical Specifications

Source Content uid

IRF6727MTRPBF

Rohs Code

Yes

Part Life Cycle Code

Active

Ihs Manufacturer

INFINEON TECHNOLOGIES AG

Package Description

CHIP CARRIER, R-XBCC-N3

Reach Compliance Code

compliant

ECCN Code

EAR99

Factory Lead Time

56 Weeks, 4 Days

Avalanche Energy Rating (Eas)

250 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

30 V

Drain Current-Max (Abs) (ID)

180 A

Drain Current-Max (ID)

32 A

Drain-source On Resistance-Max

0.0017 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code

R-XBCC-N3

JESD-609 Code

e1

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

3

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

Package Body Material

UNSPECIFIED

Package Shape

RECTANGULAR

Package Style

CHIP CARRIER

Peak Reflow Temperature (Cel)

260

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

89 W

Pulsed Drain Current-Max (IDM)

260 A

Qualification Status

Not Qualified

Surface Mount

YES

Terminal Finish

TIN SILVER COPPER

Terminal Form

NO LEAD

Terminal Position

BOTTOM

Time@Peak Reflow Temperature-Max (s)

30

Transistor Application

SWITCHING

Transistor Element Material

SILICON

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