IRF9530

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Product Technical Specifications

Part Life Cycle Code

Active

Ihs Manufacturer

ROCHESTER ELECTRONICS LLC

Reach Compliance Code

unknown

Avalanche Energy Rating (Eas)

500 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

100 V

Drain Current-Max (ID)

12 A

Drain-source On Resistance-Max

0.3 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code

TO-220AB

JESD-30 Code

R-PSFM-T3

Number of Elements

1

Number of Terminals

3

Operating Mode

ENHANCEMENT MODE

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

FLANGE MOUNT

Polarity/Channel Type

P-CHANNEL

Pulsed Drain Current-Max (IDM)

48 A

Qualification Status

COMMERCIAL

Surface Mount

NO

Terminal Form

THROUGH-HOLE

Terminal Position

SINGLE

Transistor Application

SWITCHING

Transistor Element Material

SILICON

Alternate Parts

IRF9530PBF