IRFB4227PBF Infineon Technologies AG | Chip 1 Exchange

IRFB4227PBF

Manufacturer: Infineon Technologies AG

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

IRFB4227PBF

Manufacturer Part Number:

IRFB4227PBF

Rohs Code:

Yes

Part Life Cycle Code:

Active

Ihs Manufacturer:

INFINEON TECHNOLOGIES AG

Package Description:

FLANGE MOUNT, R-PSFM-T3

Reach Compliance Code:

compliant

ECCN Code:

EAR99

Factory Lead Time:

15 Weeks

Manufacturer:

Infineon Technologies AG

Risk Rank:

1.23

Samacsys Description:

Infineon IRFB4227PBF N-channel MOSFET, 65 A, 200 V HEXFET, 3-Pin TO-220AB

Samacsys Manufacturer:

Infineon

Avalanche Energy Rating (Eas):

140 mJ

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

200 V

Drain Current-Max (Abs) (ID):

65 A

Drain Current-Max (ID):

65 A

Drain-source On Resistance-Max:

0.024 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

Number of Elements:

1

Number of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

175 °C

Operating Temperature-Min:

-40 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

FLANGE MOUNT

Peak Reflow Temperature (Cel):

NOT SPECIFIED

Polarity/Channel Type:

N-CHANNEL

Power Dissipation-Max (Abs):

330 W

Pulsed Drain Current-Max (IDM):

260 A

Qualification Status:

Not Qualified

Subcategory:

FET General Purpose Power

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Time@Peak Reflow Temperature-Max (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

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