IRFF130

Manufacturer: Infineon Technologies AG

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

IRFF130

Manufacturer Part Number:

IRFF130

Rohs Code:

No

Part Life Cycle Code:

Active

Package Description:

CYLINDRICAL, O-MBCY-W3

Reach Compliance Code:

not_compliant

ECCN Code:

EAR99

Manufacturer:

Infineon Technologies AG

Risk Rank:

6.93

Additional Feature:

AVALANCHE RATED

Avalanche Energy Rating (Eas):

75 mJ

Case Connection:

DRAIN

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

100 V

Drain Current-Max (Abs) (ID):

8 A

Drain Current-Max (ID):

8 A

Drain-source On Resistance-Max:

0.195 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-205AF

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

Number of Elements:

1

Number of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

150 °C

Operating Temperature-Min:

-55 °C

Package Body Material:

METAL

Package Shape:

ROUND

Package Style:

CYLINDRICAL

Polarity/Channel Type:

N-CHANNEL

Power Dissipation-Max (Abs):

25 W

Pulsed Drain Current-Max (IDM):

32 A

Qualification Status:

Not Qualified

Subcategory:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

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Alternate Parts

2N6796

JANTXV2N6796