IRFM120ATF

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Product Technical Specifications

Source Content uid

IRFM120ATF

Pbfree Code

Yes

Part Life Cycle Code

Active

Ihs Manufacturer

ON SEMICONDUCTOR

Package Description

SMALL OUTLINE, R-PDSO-G4

Manufacturer Package Code

318H-01

Reach Compliance Code

not_compliant

ECCN Code

EAR99

Factory Lead Time

52 Weeks

Avalanche Energy Rating (Eas)

123 mJ

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min

100 V

Drain Current-Max (Abs) (ID)

2.3 A

Drain Current-Max (ID)

2.3 A

Drain-source On Resistance-Max

0.2 Ω

FET Technology

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code

R-PDSO-G4

JESD-609 Code

e3

Moisture Sensitivity Level

1

Number of Elements

1

Number of Terminals

4

Operating Mode

ENHANCEMENT MODE

Operating Temperature-Max

150 °C

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Package Style

SMALL OUTLINE

Peak Reflow Temperature (Cel)

250

Polarity/Channel Type

N-CHANNEL

Power Dissipation-Max (Abs)

2.4 W

Pulsed Drain Current-Max (IDM)

18 A

Qualification Status

Not Qualified

Surface Mount

YES

Terminal Finish

MATTE TIN

Terminal Form

GULL WING

Terminal Position

DUAL

Time@Peak Reflow Temperature-Max (s)

30

Transistor Application

SWITCHING

Transistor Element Material

SILICON