IRLML6401GTRPBF

Manufacturer: Infineon Technologies AG

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

IRLML6401GTRPBF

Manufacturer Part Number:

IRLML6401GTRPBF

Rohs Code:

Yes

Part Life Cycle Code:

Obsolete

Ihs Manufacturer:

INFINEON TECHNOLOGIES AG

Package Description:

,

Reach Compliance Code:

compliant

ECCN Code:

EAR99

Manufacturer:

Infineon Technologies AG

Risk Rank:

8.66

Additional Feature:

HIGH RELIABILITY

Avalanche Energy Rating (Eas):

33 mJ

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

12 V

Drain Current-Max (Abs) (ID):

4.3 A

Drain Current-Max (ID):

4.3 A

Drain-source On Resistance-Max:

0.05 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss):

125 pF

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level:

1

Number of Elements:

1

Number of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

150 °C

Operating Temperature-Min:

-55 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Polarity/Channel Type:

P-CHANNEL

Power Dissipation-Max (Abs):

1.3 W

Pulsed Drain Current-Max (IDM):

34 A

Subcategory:

Other Transistors

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Turn-off Time-Max (toff):

460 ns

Turn-on Time-Max (ton):

43 ns

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