IRLML6402TRPBF

Manufacturer: Infineon Technologies AG

Product Category: Transistors

Description:

Product Technical Specifications

Source Content uid:

IRLML6402TRPBF

Manufacturer Part Number:

IRLML6402TRPBF

Rohs Code:

Yes

Part Life Cycle Code:

Active

Package Description:

SMALL OUTLINE, R-PDSO-G3

Reach Compliance Code:

compliant

ECCN Code:

EAR99

HTS Code:

8541.29.00.95

Manufacturer:

Infineon Technologies AG

Risk Rank:

0.84

Additional Feature:

ULTRA LOW RESISTANCE

Avalanche Energy Rating (Eas):

11 mJ

Configuration:

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min:

20 V

Drain Current-Max (Abs) (ID):

3.7 A

Drain Current-Max (ID):

3.7 A

Drain-source On Resistance-Max:

0.065 Ω

FET Technology:

METAL-OXIDE SEMICONDUCTOR

Feedback Cap-Max (Crss):

110 pF

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level:

1

Number of Elements:

1

Number of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Operating Temperature-Max:

150 °C

Operating Temperature-Min:

-55 °C

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style:

SMALL OUTLINE

Peak Reflow Temperature (Cel):

260

Polarity/Channel Type:

P-CHANNEL

Power Dissipation Ambient-Max:

1.3 W

Power Dissipation-Max (Abs):

1.3 W

Pulsed Drain Current-Max (IDM):

22 A

Qualification Status:

Not Qualified

Subcategory:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Time@Peak Reflow Temperature-Max (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON